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Synthesis of Nitrogen-Doped Graphene via Thermal Annealing Graphene with Urea
Authors:Xin-jing Li  Xin-xin Yu  Jin-yang Liu  Xiao-dong Fan  Kun Zhang  Hong-bing Cai  Nan Pan  Xiao-ping Wang
Affiliation:1.Department of Physics, University of Science and Technology of China, Hefei 230026, China2.Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Tech-nology of China, Hefei 230026, China3.Department of Physics, University of Science and Technology of China, Hefei 230026, China;Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Tech-nology of China, Hefei 230026, China
Abstract:
Chemical doping is an effective method to intrinsically modify the chemical and electronic property of graphene. We propose a novel approach to synthesize the nitrogen-doped graphene via thermal annealing graphene with urea, in which the nitrogen source can be controllably released from the urea by varying the annealed temperature and time. The doped N content and the configuration N as well as the thermal stabilities are also evaluated with X-ray photoelectron spectroscopy and Raman spectra. Electrical measurements indi-cate that the conductivity of doped graphene can be well regulated with the N content. The method is expected to produce large scale and controllable N-doped graphene sheets for a variety of potential applications.
Keywords:Graphene   Doping   Conductivity   X-ray photoelectron spectroscopy   Raman spectrum
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