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Effect of annealing temperature for Si0.8Ge0.2 epitaxial thin films |
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| Authors: | Yuan-Ming Chang Tsung-Chieh Cheng |
| Institution: | a Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC b Department of Mechanical Engineering, National Kaohsiung University Of Applied Science, Kaohsiung 415, Taiwan, ROC c Department of Mechanical Engineering, National Chiao Tung University, HsinChu 300, Taiwan, ROC |
| Abstract: | This study investigates the effect of annealing temperature on the Si0.8Ge0.2 epitaxial layers. The Si0.8Ge0.2 epitaxial layers were deposited by using ultrahigh vacuum chemical vapor deposition (UHVCVD) with different annealing temperatures (400-1000 °C). Various measurement technologies, including high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and interfacial adhesion tester, were used to characterize the materials properties of the SiGe epilayers. The experimental results showed that the SiGe epilayers gradually reduced lattice-mismatch to the underlying substrate as annealing temperature increased (from 400 to 800 °C), which resulted from a high temperature enhancing interdiffusion between the epilayers and the underlying substrate. In addition, the average grain size of the SiGe films increased from 53.3 to 58 nm with increasing annealing temperature. The surface roughness in thin film annealed at 800 °C was 0.46 nm. Moreover, the interfacial adhesion strength increased from 476 ± 9 to 578 ± 12 kg/cm2 with increasing the annealing temperature. |
| Keywords: | SiGe epilayers Annealing Adhesion strength UHVCVD |
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