Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors |
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| Authors: | Hongwei Chen Chuanren Yang Jihua Zhang Liye Hu |
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| Institution: | a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science & Technology of China, 610054, PR China
b School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, 400050, PR China |
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| Abstract: | Ba0.6Sr0.4TiO3 thin films were deposited on Pt/SiO2/Si substrate by radio frequency magnetron sputtering. High-resolution transmission electron microscopy (HRTEM) observation shows that there is a transition layer at BST/Pt interface, and the layer is about 7-8 nm thickness. It is found that the transition layer was diminished to about 2-3 nm thickness by reducing the initial RF sputtering power. X-ray photoelectron spectroscopy (XPS) depth profiles show that high Ti atomic concentration results in a thick interfacial transition layer. Moreover, the symmetry ν of ?r-V curve of BST thin film is enhanced from 52.37 to 95.98%. Meanwhile, the tunability, difference of negative and positive remanent polarization (Pr), and that of coercive field (EC) are remarkably improved. |
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| Keywords: | 77 55 +f 68 37 Lp 73 90 +f |
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