Giant Dielectric Properties of W6+-Doped TiO2 Ceramics |
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| Authors: | Porntip Siriya Pairot Moontragoon Pornjuk Srepusharawoot Prasit Thongbai |
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| Affiliation: | 1.Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand;2.Institute of Nanomaterials Research and Innovation for Energy (IN–RIE), Khon Kaen University, Khon Kaen 40002, Thailand |
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| Abstract: | ![]()
The effects of the sintering temperature and doping level concentration on the microstructures, dielectric response, and electrical properties of W6+-doped TiO2 (WTO) prepared via a solid-state reaction method were investigated. A highly dense microstructure, pure rutile-TiO2, and homogenously dispersed dopant elements were observed in all of the ceramic samples. The mean grain size increased as the doping concentration and sintering temperature increased. The presence of oxygen vacancies was studied. A giant dielectric permittivity (ε′ ~ 4 × 104) and low tanδ (~0.04) were obtained in the WTO ceramic sintered at 1500 °C for 5 h. The ε′ response at a low temperature was improved by increasing the doping level concentration. The giant ε′ response in WTO ceramics can be described by the interfacial polarization at the interface between the semiconducting and insulating parts, which was supported by the impedance spectroscopy. |
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| Keywords: | giant dielectric response TiO2 W6+ sintering impedance spectroscopy |
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