首页 | 本学科首页   官方微博 | 高级检索  
     检索      

类石墨相氮化碳改性研究进展
引用本文:梁海欧,许瞳,白杰,李春萍.类石墨相氮化碳改性研究进展[J].化学通报,2022,85(1):72-77,51.
作者姓名:梁海欧  许瞳  白杰  李春萍
作者单位:内蒙古工业大学化工学院 呼和浩特 010051,内蒙古工业大学化工学院 呼和浩特 010051,内蒙古工业大学化工学院 呼和浩特 010051,内蒙古工业大学化工学院 呼和浩特 010051
基金项目:国家自然科学基金项目(51772158)资助
摘    要:类石墨相氮化碳(g-C3N4)是一种不含金属的半导体材料,它具有制备方法简单、合成原材料价格低廉、含量丰富,具有很好的物理化学性质及热稳定性等优点,并且其较窄的禁带宽度满足可以直接吸收一部分可见光的要求,这些特有的优势使其一度成为人们研究和关注的焦点.然而,它的比表面积小、光生电子和空穴复合率高以及可见光利用率不足等弊...

关 键 词:石墨相氮化碳  改性  异质结构  光催化
收稿时间:2021/5/1 0:00:00
修稿时间:2021/5/13 0:00:00

Research Advances in the modification of Graphitic Carbon Nitride
Liang Haiou,Xu Tong,Bai Jie and Li Chunping.Research Advances in the modification of Graphitic Carbon Nitride[J].Chemistry,2022,85(1):72-77,51.
Authors:Liang Haiou  Xu Tong  Bai Jie and Li Chunping
Institution:Collage of Chemical Engineering,Inner Mongolia University of Technology,Hohhot,010051,Collage of Chemical Engineering,Inner Mongolia University of Technology,Hohhot,010051,Collage of Chemical Engineering,Inner Mongolia University of Technology,Hohhot,010051,Collage of Chemical Engineering,Inner Mongolia University of Technology,Hohhot,010051
Abstract:Graphite-like carbon nitride (g-C3N4) is a free of metals semiconductor which comprises easy preparation, low prices, rich content and super physical and chemical properties, in addition, it can absorb the visible light due to its narrow bandgap, and hence, the g-C3N4 is becoming a research hotspot. However, the drawbacks of low specific surface area, high recombination rate of photoelectrons and holes and poor absorbed visible light which was the researchers are trying to resolve. This paper reviews the modified strategies of g-C3N4, which including non-metal doping, surface defects, noble metal modifying and constructed heterostructure composite etc. The enhanced of photocatalytic performances are analyzed and the prospects for future investigations of g-C3N4 are proposed.
Keywords:g-C3N4  Modification  Heterostructure  Photocatalytic
本文献已被 维普 等数据库收录!
点击此处可从《化学通报》浏览原始摘要信息
点击此处可从《化学通报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号