Possibilities of ion-beam diagnostics of thin-film epitaxial and nonoriented structures |
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| Authors: | V. K. Egorov E. V. Egorov M. S. Afanas’ev |
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| Affiliation: | 1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
2. Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, 141190, Russia
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| Abstract: | Certain possibilities and features of ion-beam diagnostics of thin-film epitaxial and nonoriented structures are discussed. The main advantage of this technique (its ability to determine the element concentration profile across the target depth of several micrometers without destroying the target and the need to use standards) is illustrated by real examples. A brief description of the Sokol-3 ion-beam analytical complex, a basic tool for the ion-beam sounding of materials, is given. |
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