Enhancement of the electron mobility with infrared photoexcitation in Si: Te at low temperatures |
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Authors: | A Präg M Schulz |
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Institution: | (1) Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany |
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Abstract: | Hall measurements on Te-doped silicon (N
Te 1016 cm–3) have been performed in the temperature range between 10 K and 300 K with infrared photoexcitation of electrons into the conduction band. The samples exhibit electron Hall mobilities which are increased by approximately 50% compared to measurements in the dark. The increased electron mobility can be correlated with an increased electron population of shallow donor levels by photoexcitation. Coulomb scattering due to charged shallow donor centers is converted into less efficient dipole scattering (Te-acceptor pairs) by the light-induced redistribution of electrons. |
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Keywords: | 72 20 Jv 72 40 +w 71 55 – i |
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