SrBi4Ti4O15铁电薄膜的制备工艺及薄膜生长机理 研究

以氯化锶，硝酸铋和钛酸丁酯为原料，柠檬酸为络合剂，乙二醇为交联剂，无水乙醇为钛酸 丁酯的溶剂，盐酸为硝酸铋的溶剂，去离子水为氯化锶的溶剂，配制了稳定的SrBi_{4Ti4O15(SBTi)前驱液.采用溶胶凝胶工艺，在Pt/Ti/SiO2 /Si基片上制备了a轴取向增强的SBTi铁电薄膜.研究了一次性晶化快速退火工艺、两 层晶化快速退火工艺、逐层晶化快速退火工艺以及成膜次数对薄膜结晶性、微观结构和生长 行为的影响.实验结果表明，逐层快速退火工艺可有效抑制焦绿石相的形成；随着涂覆次数 的增加，薄膜的结晶性变好；由于SBTi晶体生长的各向异性及单层膜厚对晶体沿(119)方向 生长的限制，随着涂覆次数的增加，SBTi薄膜(119)峰和(200)峰的强度逐渐增大，而(00l) 峰的强度反而略有减小，从而使I(200)/I(119)，I(200)/I(0010)，I(119)/I(0010)逐渐增 大. 关键词： 铁电薄膜 钛酸锶铋 逐层快速退火工艺 生长行为}

Preparation and growth of SrBi4Ti4O15 ferroelectric thin film by sol-gel method

The stable strontium bismuth titanate (SBTi) precursor solution were prepared using strontium chloride, bismuth nitrate, tetrabulyl titranate as raw materials, with citric acid as complex agent, ethylene glycol as cross linker, and ethanol absolute, water, hydrochloric acid as solvents of tetrabulyl titranate, strontium chloride, bismuth nitrate, respectively. SBTi thin films with enhanced a-axis orientation were prepared on Pt/Ti/Si02/Si substrates by the Sol-Gel method. With the aid of ESEM and XRD, the effects of annealing time and the number of coatings on microstructure crystallization and growth behavior of SBTi thin films were investigated. The results indicate that the pyrochlore phase was restrained successfully by layer-by-layer rapid thermal annealing method. The crystallization of the film was enhanced with the increase of coating number. Because of the anisotropic growth of SBTi crystals and the suppressed growth in (119) direction by the thickness of single-annealed layer, the intensity of (200) and (119) peaks increase with the increase of layers, and the former increase more quickly.However, the intensity of (00l) peak decreased with the increase of layers, so the relative intensity of (200) I(200)/I(119),I(200)/I(0010)] and (119) I(119)/I(0010)] increases with the increase of layers.