Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots |
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Authors: | L E Vorob’ev D A Firsov V A Shalygin V N Tulupenko Yu M Shernyakov N N Ledentsov V M Ustinov Zh I Alferov |
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Institution: | (1) St. Petersburg State Technical University, 195251 St. Petersburg, Russia;(2) Donbass State Mechanical Engineering Academy, 343913 Kramatorsk, Ukraine;(3) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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Abstract: | The spontaneous emission of far-infrared radiation (λ≅10–20 μm) from diode structures with vertically coupled InGaAs/AlGaAs
quantum dots is observed. This emission is due both to transitions of holes and electrons between size-quantization levels
in quantum dots and to transitions from the continuum to a level in a quantum dot. It is observed only when accompanied by
lasing at short wavelengths (λ≅0.94 μm) and, like the short-wavelength emission, it exhibits a current threshold. The spontaneous
emission of long-wavelength radiation is also observed in InGaAs/GaAs quantum-well laser structures. This radiation is approximately
an order of magnitude weaker than that from quantum-dot structures, and it has no current threshold.
Pis’ma Zh. éksp. Teor. Fiz. 67, No. 4, 256–260 (25 February 1998) |
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