| 氧化铝与Al(100)基体间界面原子结构研究 |
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| 引用本文： | 承焕生,要小未,杨福家.氧化铝与Al(100)基体间界面原子结构研究[J].物理学报,1993,42(7):1110-1115. |
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| 作者姓名： | 承焕生 要小未 杨福家 |
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| 作者单位： | 上海复旦大学物理二系,上海,200433 |
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| 摘 要： | 本文介绍了用MeV离子散射和沟道效应研究单晶铝表面无定型氧化层与基体之间界面原子结构的方法。报道了Al2O3/Al(100)界面原子结构的实验结果。实验表明,在纯氧气氛围中400℃下生成的氧化铝膜,铝和氧原子浓度比例严格为2与3之比;Al2O3膜和Al(100)基体之间的界面极其陡峭,氧化铝膜下Al(100)基体表面的再构层不大于一个原子层。由实验测量与用Monte Carlo方法计算结果比较,得到再构层原子离开原来晶
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| 收稿时间： | 1990-09-20 |
STUDIES OF INTERFACE ATOMIC STRUCTURE OF Al2O3/Al(100) BY MeV ION SCATTERING AND CHANNELING |
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| CHENG HUAN-SHENG,YAO XIAO-WEI and YANG FU-JIA.STUDIES OF INTERFACE ATOMIC STRUCTURE OF Al2O3/Al(100) BY MeV ION SCATTERING AND CHANNELING[J].Acta Physica Sinica,1993,42(7):1110-1115. |
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| Authors: | CHENG HUAN-SHENG YAO XIAO-WEI and YANG FU-JIA |
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| Abstract: | The experimental method for studying interface atomic structure between amorphous layer and crystal by MeV ion scattering and channeling is described. This method is applied . to study the Al2O3/Al(100) interface. Thin Al oxide film are formed on clean Al(l00) surface in pure oxygen ambience at 400℃. The experimental results show that the composition of the oxide film is precisely Al2O3, and the interface between Al oxide film and Al(l00) bulk is very sharp, the reconstructive layer under the Al2O3 film is no more than one monolayer. Monte carlo simulations indicate the distance between displaced Al atoms on the reconstuctive layer and Al〈l00〉axis is 0.18 A. At room temperature, the oxygen adsorption layer of Al〈l00〉 is primarily stoichiometric A1O at low surface coverages. |
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