Anomalous hall effect in Mn δ-doped GaAs/In0.17Ga0.83As/GaAs quantum wells with high hole mobility |
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| Authors: | B A Aronzon V A Kul’bachinskiĭ P V Gurin A B Davydov V V Ryl’kov A B Granovskiĭ O V Vikhrova Yu A Danilov B N Zvonkov Y Horikoshi K Onomitsu |
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| Institution: | (1) Russian Research Centre Kurchatov Institute, Moscow, 123182, Russia;(2) Institute of Applied and Theoretical Electrodynamics, Russian Academy of Sciences, Moscow, 127412, Russia;(3) Faculty of Physics, Moscow State University, Moscow, 119992, Russia;(4) Research Physicotechnical Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia;(5) School of Science and Engineering, Waseda University, 3-4-1, Okubo, Tokyo 169-8555, Japan |
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| Abstract: | Magnetic and magnetotransport properties of GaAs(δ〈Mn〉)/In0.17Ga0.83As/GaAs quantum wells with different Mn concentrations are studied. The delta-doped manganese layer has been separated from the GaAs quantum well with a spacer with an optimal thickness (3 nm), which has provided a sufficiently high hole mobility (≥103 cm2V?1 s?1) in the quantum wells and their effective exchange with Mn atoms. It is found that the anomalous Hall effect (AHE) is exhibited only in a restricted temperature range above and below the Curie temperature, while the AHE is not observed in quantum wells with quasi-metallic conductivity. Thus, it is shown that the use of the AHE is inefficient in studying magnetic ordering in semiconductor systems with high-mobility carriers. The features observed in the behavior of the resistance, magnetoresistance, and Hall effect are discussed in terms of the interaction of holes with magnetic Mn ions with regard to fluctuations of their potential, hole transport on the percolation level, and hopping conduction. |
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