Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces |
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| Authors: | E M Trukhanov I D Loshkarev K N Romanyuk A K Gutakovskii A S Ilin and A V Kolesnikov |
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| Abstract: | It is shown for (111) and (001) interfaces that at an identical degree of strain relaxation in semi-conductor epitaxial films,
the ratio of distances D between neighboring dislocations is D
(111)/D
(001) = 1.5. This allows us to establish that dislocation interface (7 7 10) contains partial 90° Shockley dislocations lying in
three directions of 〈110〉. |
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