| ITO导电膜红外发射率理论研究 |
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| 引用本文： | 张维佳,王天民,钟立志,吴小文,崔敏.ITO导电膜红外发射率理论研究[J].物理学报,2005,54(9):4439-4444. |
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| 作者姓名： | 张维佳 王天民 钟立志 吴小文 崔敏 |
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| 作者单位： | 北京航空航天大学 理学院,北京 100083 |
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| 基金项目： | 国防基础研究项目（批准号：K1201060805）、国防预研项目(批准号：413100202)资助的课题. |
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| 摘 要： | 根据红外辐射理论和薄膜光学原理计算了高品质ITO(indium tin oxide)导电膜的红外发射 率,其理论曲线与实测曲线基本符合. 并得出方块电阻小于30Ω时,ITO膜在红外波段8—14μ m的平均红外发射率理论值小于0.1.实际制备方块电阻小于10Ω的ITO膜具有优良的红外隐身 性能. 讨论了高品质ITO膜具有低红外发射率的物理机理,并提出了低红外发射率临界方块电 阻值,这有利於理论研究和工艺制备红外隐身ITO膜.
关键词：
红外发射率
ITO薄膜
理论计算
方块电阻
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| 关 键 词： | 红外发射率 ITO薄膜 理论计算 方块电阻 |
| 文章编号： | 1000-3290/2005/54(09)/4439-06 |
| 收稿时间： | 10 10 2004 12:00AM |
| 修稿时间： | 2004-10-102005-01-14 |
Theoretical study of infrared emissivity of indium tin oxide films |
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| ZHANG Wei-jia,Wang Tian-Min,Zhong Li-Zhi,WU Xiao-wen,CUI Min.Theoretical study of infrared emissivity of indium tin oxide films[J].Acta Physica Sinica,2005,54(9):4439-4444. |
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| Authors: | ZHANG Wei-jia Wang Tian-Min Zhong Li-Zhi WU Xiao-wen CUI Min |
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| Abstract: | Infrared emissivity of high quality indium tin oxide (ITO) film has been calcula ted based on the infrared radiation theory and thin film optical theory, the the oretical curves and the testing curves basically agree with each other. It is concluded that when the sheet resistance is less than 30Ω, the theoretical val ue of infrared emissivity of ITO films on the infrared wave band of 8μm to 14μ m will be less than 0.1. Therefore, the ITO film of practical sheet resistance less than 10Ω has good infrared stealthy capability. Physical mechanism of low infrared emissivity for ITO film is discussed, and the critical sheet resistance of low infrared emissivity, which conduce to the theoretical study and the ma nufacture of infrared stealthy ITO film, is put forward in this paper. |
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| Keywords: | infrared emissivity ITO film theoretical calculation sheet resistance |
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