High Concentration Arsenic Diffusion in Crystalline Silicon: An Asymptotic Analysis

For fairly high concentrations, the effective arsenic diffusioncoefficient is known to grow linearly with the concentration.In this paper, we consider the strongly enhanced diffusion ofarsenic by asymptotic methods, and extend the results of a previouspaper (King & Please, 1987) in three ways: we characterizean additional (low-concentration) region; we consider the influenceof the initial data; and we consider the case of constant surfaceconcentration.