Mechanism of etching and of surface modification of polyimide in RF and LF SF6-O2 discharges

Etch rates of Kapton H polyimide film in SF₆-O₂ plasmas (0.25 torr) were studied as a function of the input gas mixture, the excitation frequency (25–450 kHz; 13.56 MHz), and the biasing mode. The treated surface was examined by X ray photoelectron spectroscopy (ESCA), scanning electron microscopy (SEM), and contact angle measurement. The ion and neutral species of the plasma were sampled and analyzed by mass spectrometry. Etch rates are found to depend on the positive ion flux and the degree of dissociation of neutral molecules. Plasma-treated surfaces are always covered with a deposited material (C_nH_mO_xF_y) which partially obstructs the etching reaction by a masking effect and causes surface roughness. A proposed kinetic analysis of the etching mechanism is in good agreement with the experimental data.