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| 外加磁场对熔融半导体CZ法拉晶过程中流动场影响的数值计算 | |
| 引用本文： | 陈熙,薛明伦. 外加磁场对熔融半导体CZ法拉晶过程中流动场影响的数值计算[J]. 力学学报, 1990, 0(1) |
| 作者姓名： | 陈熙 薛明伦 |
| 作者单位： | 清华大学工程力学系(陈熙)，中国科学院力学研究所(薛明伦) |
| 摘 要： | 数值分析结果表明,外加磁场可以改变熔融半导体中的流型,几千高斯的磁场可以显著地减小熔体的流动,但对温度场影响不大。 |
| 关 键 词： | CZ法中熔体对流 磁场影响 数值模拟 |
INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION |
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| Chen Xi. INFLUENCE OF EXTERNAL MAGNETIC FIELD ON THE FLOWFIELD OF MOLTEN SEMICONDUCTORS DURING CZO-CHRALSKI CRYSTAL GROWTH PROCESS -ANUMERICAL SIMULATION[J]. chinese journal of theoretical and applied mechanics, 1990, 0(1) | |
| Authors: | Chen Xi |
| Abstract: | . Numerical results show that the external magnetic field influences significantly the flow field of molten semiconductors during Czochralski crystal growth process. The melt flow could be heavily damped by a magnetic field with intensity of several thousand gauss, while the temperature field is nearly unaffected because of very low Prandtl number. |
| Keywords: | melt flow in GZ crystal growth magnetic field effect numerical simulation |
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