p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响

研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明：较厚的p-GaN层会减小器件的量子效率，然而同时也会减小器件的暗电流，较薄的p-GaN层会增加器件的量子效率，但是同时也增加了器件的暗电流.进一步的分析表明，金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中，应该根据实际需要选择p型层的厚度. 关键词： GaN 紫外探测器 量子效率 暗电流

Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors

We investigated the influence of thickness of p-GaN layer on the performance of p-i-n structure GaN ultraviolet photodetector. Through the simulation calculation，it was found that both the quantum efficiency and dark current of device decrease when employing thicker p-GaN layer，while both the quantum efficiency and dark current increase with decreasing thickness of p-GaN layer. It is suggested that the Schottky contact junction between the metal and p-GaN may be responsible for the incompatible effect. We has to make a suitable choice of the thickness of p-GaN in the device design according to the application requirement.