SrO/Si(100)表面去氧过程的研究

借助高温扫描隧道显微镜和光电子能谱技术，深入研究了SrO/Si(100)表面向Sr/Si(100)再构表面的动态转化过程.Sr/Si(100)再构表面在硅基氧化物外延生长中起重要作用.在该动态转化过程中，样品在500 ℃的退火温度下，表面出现SrO晶化的现象；在550—590 ℃的退火温度下，SrO/Si(100)开始向Sr/Si(100)转化，界面和表面上的氧以气态的SiO溢出，使得表面出现大量凹槽状缺陷.并且在此动态转化过程中表面的电子态表现出金属特性，这是由于表层硅原子发生断键重排，从而在表面出现悬 关键词： SrO/Si表面 Sr/Si表面 扫描隧道显微镜 去氧过程

Investigation on the deoxidation process of SrO/Si(100)surface

Using high temperature scanning tunneling microscopy (STM) and XPS, we investigated the dynamic process of SrO/Si(100) changing to Sr/Si(100) reconstructed surface, which plays a critical role in the growth of crystalline oxide on silicon substrate. During this process we find some interesting phenomenan: there appears crystalline SrO on Si(100) substrate at low annealing temperature of 500 ℃; at higher annealing temperature of 550—590 ℃, the oxygen in the SrO/Si(100) interface will react with silicon and form volatile SiO, leading the surface with a large quantity of line vacancies. In the later case, there appears abnormal metallic property of this surface, which results from dangling bonds of silicon atoms in the surface.