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| CuInS2：两步电沉积制备及性能 | |
| 引用本文： | 刘小雨,王广君,田宝丽,余腊锋,张兴堂,杜祖亮. CuInS2：两步电沉积制备及性能[J]. 无机化学学报, 2008, 24(12): 2035-2038 |
| 作者姓名： | 刘小雨 王广君 田宝丽 余腊锋 张兴堂 杜祖亮 |
| 作者单位： | 河南大学特种功能材料教育部重点实验室,开封,475004 |
| 基金项目： | 国家自然科学基金 ， 教育部新世纪优秀人才计划 ， 国家重点基础研究计划 |
| 摘 要： | 采用恒电位沉积法制备铜铟合金预制膜,并存管式炉中通过固态源蒸发硫化预制膜得到CuInS:薄膜.通过扫描电镜(SEM)、能量色散谱仪(EDS)和X射线衍射仪(XRD)对CuInS2薄膜的表而形貌、截面厚度、成分组成和薄膜的组织结构进行了研究,并利用紫外可见光吸收谱仪(UV-Vis)研究了不同硫化温度对CuInS:薄膜的形貌及其光学吸收性质的影响.结果表明:不同的退火温度能够影响CuInS:薄膜的表面形貌以及带隙的大小,从而影响其光学吸收特性. |
| 关 键 词： | 电沉积 固态源蒸发硫化 退火温度 光学特性 |
Growth and Properties of CuInS2 by Two-step Electrodeposition and Solid-state Sulfurzation |
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| LIU Xiao-Yu,WANG Guang-Jun,TIAN Bao-Li,YU La-Feng,ZHANG Xing-Tang and DU Zu-Liang. Growth and Properties of CuInS2 by Two-step Electrodeposition and Solid-state Sulfurzation[J]. Chinese Journal of Inorganic Chemistry, 2008, 24(12): 2035-2038 | |
| Authors: | LIU Xiao-Yu WANG Guang-Jun TIAN Bao-Li YU La-Feng ZHANG Xing-Tang DU Zu-Liang |
| Affiliation: | Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, Henan 475004,Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, Henan 475004,Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, Henan 475004,Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, Henan 475004,Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, Henan 475004 and Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, Henan 475004 |
| Abstract: | CuInS2 thin films were prepared by electrodeposition and by sulfurization in sublimed sulfur atmosphere. The morphology and composition as well as the thickness and crystal of the thin film were characterized with scanning electron microscopy(SEM), X-ray energy dispersive spectroscopy(EDS) and X-ray diffraction(XRD). UV-Vis absorption spectroscopy was used to study the optical properties of films with different annealing temperatures. It is found that annealing temperature has an effect on the morphology and the band-gap value of the films, as a result influences the optical properties. |
| Keywords: | electrodeposition solid-state sulfurzation annealed temperature optical properties |
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