CuSbS2‐Sensitized Inorganic–Organic Heterojunction Solar Cells Fabricated Using a Metal–Thiourea Complex Solution

The device performance of sensitizer‐architecture solar cells based on a CuSbS₂ light sensitizer is presented. The device consists of F‐doped SnO₂ substrate/TiO₂ blocking layer/mesoporous TiO₂/CuSbS₂/hole‐transporting material/Au electrode. The CuSbS₂ was deposited by repeated cycles of spin coating of a Cu‐Sb‐thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 °C. Poly(2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4H‐cyclopenta2,1‐b;3,4‐b′]dithiophene)‐alt‐4,7(2,1,3‐benzothiadiazole)) (PCPDTBT) was used as the hole‐transporting material. The best‐performing cell exhibited a 3.1 % device efficiency, with a short‐circuit current density of 21.5 mA cm^?2, an open‐circuit voltage of 304 mV, and a fill factor of 46.8 %.