Pressure-induced phase transitions for goethite investigated by Raman spectroscopy and electrical conductivity |
| |
| Authors: | Kaixiang Liu Heping Li Haiying Hu Yukai Zhuang Linfei Yang |
| |
| Institution: | 1. Key Laboratory of High-Temperature and High-Pressure Study of the Earth’s Interior, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang, Guizhou, People’s Republic of China;2. University of Chinese Academy of Sciences, Beijing, People’s Republic of China |
| |
| Abstract: | We reported two pressure-induced phase transitions of goethite up to ～35?GPa using a diamond anvil cell in conjunction with ac impendence spectroscopy, Raman spectra at room temperature. The first pressure-induced phase transition at ～7.0?GPa is manifested in noticeable changes in six Raman-active modes, two obvious splitting phenomena for the modes and the variations in the slope of conductivity. The second phase transition at ～20?GPa was characterized by an obviously drop in electrical conductivity and the noticeable changes in the Raman-active modes. The variations in activation energy with increasing pressure were also discussed to reveal the electrical properties of goethite at high pressure. |
| |
| Keywords: | Goethite high pressure Raman spectroscopy electrical conductivity phase transition |
|
|
