Capture cross-section and density of deep gap states in a−SiHx schottky barrier structures |
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| Authors: | B. Abeles C.R. Wronski Y. Goldstein G.D. Cody |
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| Affiliation: | Exxon Research and Engineering Company, Corporate Research Laboratory, P.O. Box 45, Linden, NJ 07036, U.S.A. |
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| Abstract: | Recombination of charge carriers in a?SiHx Schottky barriers with density of states near mid-gap ranging from 2.8×1015?7×1016cm-1eV-1 is attributed to recombination centers with hole capture cross-section of 1.3×10-15cm2. |
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