Instability-driven SiGe island growth |
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Authors: | Tromp Ross Reuter |
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Affiliation: | IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA. |
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Abstract: | Three-dimensional islanding is generally assumed to proceed through nucleation and growth. Here we present studies showing the growth of Si1-xGex islands (0.2
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