Deposition and properties of B-N codoped p-type ZnO thin films by RF magnetron sputtering |
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Authors: | YR Sui B Yao JH Yang XM Huang LL Gao DZ Shen |
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Institution: | a Department of Physics, Jilin University, Changchun 130023, China b Department of Physics, Jilin Normal University, Siping 136000, China c Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China |
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Abstract: | B-N codoped p-type ZnO thin films have been realized by radio frequency (rf) magnetron sputtering using a mixture of argon and oxygen as sputtering gas. Types of conduction and electrical properties in codoped ZnO films were found to be dependent on oxygen partial pressure ratios in the sputtering gas mixture. When oxygen partial pressure ratio was 70%, the codoped ZnO film showed p-type conduction and had the best electrical properties. Additionally, the p-ZnO/n-Si heterojunction showed a clear p-n diode characteristic. XRD results indicate that the B-N codoped ZnO film prepared in 70% oxygen partial pressure ratio has high crystal quality with (0 0 2) preferential orientation. Meanwhile, the B-N codoped ZnO film has high optical quality and displays the stronger near band edge (NBE) emission in the temperature-dependent photoluminescence spectrum, the acceptor energy level was estimated to be located at 125 meV above the valence band. |
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Keywords: | Zinc oxide B-N codoping p-Type conduction Sputtering Properties |
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