Microstructural and surface property variations due to the amorphous region formed by thermal annealing in Al-doped ZnO thin films grown on n-Si (1 0 0) substrates |
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Authors: | JH Han TW Kim JY Lee JY Kim |
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Institution: | a Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, Republic of Korea b Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea c Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea d Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea |
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Abstract: | X-ray diffraction (XRD) patterns revealed that the as-grown and annealed Al-doped ZnO (AZO) films grown on the n-Si (1 0 0) substrates were polycrystalline. Transmission electron microscopy (TEM) images showed that bright-contrast regions existed in the grain boundary, and high-resolution TEM (HRTEM) images showed that the bright-contrast regions with an amorphous phase were embedded in the ZnO grains. While the surface roughness of the AZO film annealed at 800 °C became smoother, those of the AZO films annealed at 900 and 1000 °C became rougher. XRD patterns, TEM images, selected-area electron diffraction patterns, HRTEM images, and atomic force microscopy (AFM) images showed that the crystallinity in the AZO thin films grown on the n-Si (1 0 0) substrates was enhanced resulting from the release in the strain energy for the AZO thin films due to thermal annealing at 800 °C. XRD patterns and AFM images show that the crystallinity of the AZO thin films annealed at 1000 °C deteriorated due to the formation of the amorphous phase in the ZnO thin films. |
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Keywords: | 61 10 &minus l 68 37 Lp |
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