Characterization of Si-added aluminum oxide (AlSiO) films for power devices |
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| Authors: | Naoyoshi Komatsu Keiko Masumoto Hidemitsu Aoki Chiharu Kimura Takashi Sugino |
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| Affiliation: | Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan |
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| Abstract: | Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed by Si addition and is minimized with Si composition ratio of 12%. Capacitance versus voltage (C-V) measurements are carried out for Au/AlSiO/Si MIS structure. Both flat band shift and hysteresis of the C-V characteristics are suppressed by Si addition. A low leakage current is demonstrated for Au/AlSiO/n-SiC MIS structure. |
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| Keywords: | Wide bandgap Insulator AlSiO MIS AlO Power device |
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