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Thermoelectric properties of Bi2Te3 films by constant and pulsed electrodeposition
Authors:Cristina V Manzano  Adriana A Rojas  Michelle Decepida  Begoña Abad  Yazmin Feliz  Olga Caballero-Calero  Diana-Andra Borca-Tasciuc  Marisol Martin-Gonzalez
Institution:1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8 PTM, Tres Cantos, 28760, Madrid, Spain
2. Chemical Engineering Department, Rensselaer Polytechnic Institute, Troy, NY, USA
3. Mechanical, Aerospace and Nuclear Engineering Department, Rensselaer Polytechnic Institute, Troy, NY, USA
4. Department of Mathematics, Rensselaer Polytechnic Institute, Troy, NY, USA
Abstract:Bi2Te3 films have been grown by constant and pulsed electrochemical deposition. The pulsed deposition was carried out by alternating between a constant potential (potentiostatic mode) and an open circuit potential (galvanostatic mode, where current density is fixed at 0 mA/cm2). The Harris texture analysis was performed to determine the degree of preferred orientation. The results showed that the films were strongly oriented along (1?1?0) direction. The morphology and compositions of the films were then analyzed. Finally, their Seebeck coefficient and electrical resistivity were measured and used to determine the thermoelectric Power Factor of the films for a temperature range between 57 and 107 °C.
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