Magnetic spin excitations in Mn doped GaAs: a model study |
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Authors: | A Chakraborty R Bouzerar G Bouzerar |
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Institution: | (1) Laboratoire de Physique Théorique, CNRS-UMR5152, Université Paul Sabatier, 31062 Toulouse, France;(2) Theoretische Physik, Universität des Saarlandes, 66041 Saarbrücken, Germany |
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Abstract: | We provide a quantitative theoretical model study of the dynamical magnetic properties of optimally annealed Ga1−
x
Mn
x
As. This model has already been shown to reproduce accurately the Curie temperatures for Ga1−
x
Mn
x
As. Here we show that the calculated spin stiffness are in excellent agreement with those which were obtained from ab-initio
based studies. In addition, an overall good agreement is also found with available experimental data. We have also evaluated
the magnon density of states and the typical density of states from which the“mobility edge”, separating the extended from
localized magnon states, was determined. The power of the model lies in its ability to be generalized for a broad class of
diluted magnetic semiconductor materials, thus it bridges the gap between first principle calculations and model based studies. |
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Keywords: | |
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