|
|||||
|
|
Raman spectra and structural peculiarities of GaAs nanowires |
|
| Authors: | S. V. Karpov M. B. Smirnov B. V. Novikov A. N. Smirnov I. V. Shtrom E. L. Chirkov G. E. Tcirlin A. D. Bouravleuv Yu. V. Samsonenko |
| Affiliation: | 1. St. Petersburg State University, St. Petersburg, Russia 2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia 3. St. Petersburg Academic University, St. Petersburg, Russia 4. Institute for Analytical Instruments, Russian Academy of Sciences, St. Petersburg, Russia |
| Abstract: | The Raman scattering spectra of nanowire samples in the region of fundamental modes (50–320 cm?1) are studied to analyze the structural peculiarities of GaAs nanowires (nanowhiskers) grown on a Si (111) substrate. Factor analysis of the experimental data array consisting of 55 spectra, each of which contains 300 points, is carried out. It is found that the number of linearly independent contributions in these data arrays amounts to only two spectra. The form of each linearly independent contribution is close to zincblende (ZB) and wurtzite (WZ) spectra. It is established that ZB and WZ phases exist in nanowhiskers. Comparison with the calculated frequencies of the normal vibrations of hexagonal GaAs polytypes makes it possible to assume that the spectra of crystal nanowhiskers are combinations of ZB and WZ spectra with good accuracy and agree with the scheme of phonon branch folding of the ZB Brillouin zone. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |