Preparation of transparent conductive TiO2:Nb thin films by pulsed laser deposition |
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| Authors: | K. Tonooka Te-Wei Chiu |
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| Affiliation: | a National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
b National Taipei University of Technology 1, Sec.3, Zhongxiao E. Rd., Taipei, Taiwan, ROC |
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| Abstract: | This study investigated the optical and electrical properties of Nb-doped TiO2 thin films prepared by pulsed laser deposition (PLD). The PLD conditions were optimized to fabricate Nb-doped TiO2 thin films with an improved electrical conductivity and crystalline structure. XRD analyses revealed that the deposition at room temperature in 0.92 Pa O2 was suitable to produce anatase-type TiO2. A Nb-doped TiO2 thin film attained a resistivity as low as 6.7 × 10−4 Ω cm after annealing at 350 °C in vacuum (<10−5 Pa), thereby maintaining the transmittance as high as 60% in the UV-vis region. |
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| Keywords: | 81.15.Fg 73.61.Le 78.40.Fy |
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