Preparation of transparent conductive TiO2:Nb thin films by pulsed laser deposition |
| |
| Authors: | K Tonooka Te-Wei Chiu |
| |
| Institution: | a National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
b National Taipei University of Technology 1, Sec.3, Zhongxiao E. Rd., Taipei, Taiwan, ROC |
| |
| Abstract: | This study investigated the optical and electrical properties of Nb-doped TiO2 thin films prepared by pulsed laser deposition (PLD). The PLD conditions were optimized to fabricate Nb-doped TiO2 thin films with an improved electrical conductivity and crystalline structure. XRD analyses revealed that the deposition at room temperature in 0.92 Pa O2 was suitable to produce anatase-type TiO2. A Nb-doped TiO2 thin film attained a resistivity as low as 6.7 × 10−4 Ω cm after annealing at 350 °C in vacuum (<10−5 Pa), thereby maintaining the transmittance as high as 60% in the UV-vis region. |
| |
| Keywords: | 81 15 Fg 73 61 Le 78 40 Fy |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
