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MCML/TG混合结构与三值T门和三值Dlatch电路设计
引用本文:章专,连明超.MCML/TG混合结构与三值T门和三值Dlatch电路设计[J].浙江大学学报(理学版),2012,39(5):531-534.
作者姓名:章专  连明超
作者单位:浙江大学电路与系统研究所,浙江杭州,310027
摘    要:在深入分析MCML和TG的电路特点后,提出将2种结构结合起来进行数字电路设计的思路.该混合结构主要由MCML和TG共同构成,MCML结构产生控制信号,TG进行信号的传输.并以三值T门和三值D锁存器电路为例,验证了这种设计思路的可行性.通过Hspice软件,采用TSMC 0.18 μm CMOS工艺,供电电压1.8 V,对所设计的电路进行仿真,分析结果表明:电路逻辑功能正确;输入输出高低电平一致,具有较好的电压兼容性;功耗保持MCML结构的优势,基本与频率无关;与传统的CMOS电路相比,取得了较大的延迟优化.

关 键 词:MOS电流模逻辑  MCML  CMOS传输门  三值T门
收稿时间:2011-04-30;

The mixed MCML/TG logic and design of ternary T gate and D-latch circuits
ZHANG Zhuan , LIAN Ming-chao.The mixed MCML/TG logic and design of ternary T gate and D-latch circuits[J].Journal of Zhejiang University(Sciences Edition),2012,39(5):531-534.
Authors:ZHANG Zhuan  LIAN Ming-chao
Institution:(Institute of Electronic Circuit and Information System,Zhejiang University,Hangzhou 310027,China)
Abstract:Based on the analysis of the characteristic of the MCML and TG circuits,a combined logic is proposed,and the main unit of the logic is composed of MCML and TG.Moreover,3-T Gate and D-latch circuits are designed to validate the accuracy of the logic.The proposed logic is validated by means of Hspice simulations on a TSMC 0.18 μm CMOS technology.The simulation results show the power dissipation of the MCML/TG circuits are almost independent of clock frequency,the input and output voltage is consistent,and the propagation delay is improved greatly compared with the conventional CMOS circuits.
Keywords:MOS current mode logic  MCML  CMOS transmission gate  ternery T gate
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