Shallow thermal donors in nitrogen-doped silicon single crystals |
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Authors: | V V Voronkov G I Voronkova A V Batunina V N Golovina L V Arapkina N B Tyurina A S Gulyaeva M G Mil’vidskii |
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Institution: | (1) State Rare-Metal Research Institute, Bol’shoi Tolmachevskii per. 5, Moscow, 109017, Russia |
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Abstract: | Czochralski-grown nitrogen-doped silicon crystals contain shallow thermal donors (STD) which are not present in reference crystals. In the course of annealing at 600 or 650°C, the STD concentration reaches saturation and this concentration scales with nitrogen content N as N1/2. This implies that an STD includes only one nitrogen atom and that the most likely model of the STD defect is the NOm complex of an interstitial nitrogen atom with m oxygen atoms. The number m is estimated as, on the average, m=3 from data on the temperature dependence of the equilibrium constant for the complex formation reaction |
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