Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction |
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Authors: | Zhang Min and Ban Shi-Liang |
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Institution: | School of Physical Science and Technology, Inner
Mongolia
University, Hohhot 010021, China; School of Physical Science and Technology, Inner
Mongolia
University, Hohhot 010021, China;College of Physics and Electron Information, Inner
Mongolia Normal University, Hohhot 010022, China |
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Abstract: | A variational method is adopted to investigate the properties of
shallow impurity states near the interface in a free strained
wurtzite GaN/AlxGa1-xN heterojunction under hydrostatic
pressure and external electric field by using a simplified coherent
potential approximation. Considering the biaxial strain due to
lattice mismatch or epitaxial growth and the uniaxial strains
effects, we investigated the Stark energy shift led by an external
electric field for impurity states as functions of pressure as well
as the impurity position, Al component and areal electron density.
The numerical result shows that the binding energy near linearly
increases with pressure from 0 to 10~GPa. It is also found that the
binding energy as a function of the electric field perpendicular to
the interface shows an un-linear red shift or a blue shift for
different impurity positions. The effect of increasing x on blue
shift is more significant than that on the red shift for the
impurity in the channel near the interface. The pressure influence
on the Stark shift is more obvious with increase of electric field
and the distance between an impurity and the interface. The increase
of pressure decreases the blue shift but increases the red shift. |
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Keywords: | GaN/AlxGa1-xN strain pressure Stark effect binding energy of impurity state |
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