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Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates |
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| Authors: | Azusa N Hattori Fumio Kawamura Masashi Yoshimura Yasuo Kitaoka Yusuke Mori Ken Hattori Hiroshi Daimon Katsuyoshi Endo |
| Institution: | 1. Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan;2. Division of Electrical, Electronic, and Information Engineering, Graduate School of Engineering, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan;3. Frontier Research Center, Osaka University, Yamada-oka 2-1, Suita, Osaka 565-0871, Japan;4. Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan |
| Abstract: | We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containing GaN(0001)2 × 2 reconstruction was successfully achieved on both HVPE and LPE surfaces by etching in HF and subsequent annealing at ～ 550 °C but was not achieved by etching in HCl, NaOH, and HNO3. |
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