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Fabrication of ZnO thin films by femtosecond pulsed laser deposition
Authors:Joseph Lik Hang Chau  Min-Chieh Yang  Takahiro Nakamura  Shunichi Sato  Chih-Chao Yang  Chung-Wei Cheng
Affiliation:1. Nanopowder and Thin Film Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County, Taiwan;2. Laser Application and Technology Center, ITRI South, Industrial Technology Research Institute, Tainan County, Taiwan;3. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Aoba-ku, Sendai, Japan;1. Institute of Mathematics, Poznań University of Technology, Piotrowo 3A, 60-965 Poznań, Poland;2. East European State Higher School, ul. Tymona Terleckiego 6, 37-700 Przemy?l, Poland;3. Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland;4. University of Rzeszow, Institute of Physics, Rejtana 16a, 35-959 Rzeszów, Poland;5. Rzeszow University of Technology, The Faculty of Mathematics and Applied Physics, Powstańców Warszawy 6, 35-959 Rzeszów, Poland;1. School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an, Shaanxi 710121, China;2. Weinan Normal University, Weinan 714000, China;1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;2. University of Chinese Academy of Sciences, Beijing 100039, China;3. Key Laboratory of Transparent and Opto-functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;1. National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China;2. Faculty of Environmental Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;3. Faculty of Physical Science and Technology, Yunnan University, Kunming 650091, China;1. Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, Karnataka, 576104, India;2. Institute of Optoelectronics and Measuring Systems, Faculty of Electrical Engineering, Czestochowa University of Technology, ArmiiKrajowej 17, PL-42-201 Czestochowa, Poland;3. Department of Physics, Mangalore University, Mangalore, Karnataka 574199, India;4. Industrial Accelerator Section, PSIAD, Raja Ramanna Centre for Advanced Technology, Indore 452012, M.P., India
Abstract:The growth of ZnO thin films on sapphire substrate using the femtosecond PLD technique is reported. The effect of substrate temperature and oxygen pressure on the structural properties of the films was studied. Highly c-axis oriented ZnO films can be grown on sapphire substrates under vacuum conditions using the femtosecond PLD process. There is an optimum substrate temperature for the pulsed laser deposition of ZnO film that enhances the thermodynamic stability and allows the formation of well-crystallized thin films. The crystal quality of the films can be further improved by increasing the deposition time and introducing oxygen during the pulsed laser deposition process.
Keywords:
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