Photo-induced site-specific nitridation of plasma-deposited B10C2Hx films: A new pathway toward post-deposition doping of semiconducting boron carbides |
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| Authors: | Swayambhu Behera Justin Wilks Peter A. Dowben M. Sky Driver A.N. Caruso Jeffry A. Kelber |
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| Affiliation: | 1. Department of Physics and Center for Electronic Materials Processing and Integration, University of North Texas, Denton, TX, 76203, United States;2. Department of Chemistry and Center for Electronic Materials Processing and Integration, University of North Texas, Denton, TX, 76203, United States;3. Department of Physics and Astronomy, Nebraska Center for Nanostructures and Materials, University of Nebraska-Lincoln, Lincoln, NE 68588, United States;4. Department of Physics, University of Missouri-Kansas City, Kansas City, MO 64110, United States |
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| Abstract: | We show that dopant impurities can be introduced in a controlled, site-specific manner into pre-deposited semiconducting boron carbide films. B―N bond formation has been characterized by X-ray photoelectron spectroscopy for semiconducting B10C2Hx films exposed to vacuum ultraviolet photons in the presence of NH3. Core level photoemission data indicate that B―NH2 bonds are formed at B sites bonded to other boron atoms (B―B), and not at boron atoms adjacent to carbon atoms (B―C) or at carbon atom sites. Nitridation obeys diffusion-limited kinetics. These results indicate that dopant species can be introduced in a controlled, site-specific manner into pre-deposited boron carbide films, as opposed to currently required dopant incorporation during the deposition process. |
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