Abstracts |
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| Authors: | W Marine J Marfaing |
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| Institution: | U.A. CNRS 783, Faculté des Sciences de Luminy, Département de Physique , Case 901, 13288 , Marseille Cedex , 9 , France |
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| Abstract: | Abstract Isothermal annealing of amorphous Si and Ge has been performed by picosecond pulsed laser irradiation of free-standing films. It is found that the laser induced nucleation rate is about 1021-5.1022 cm?3 s?1 (Si) and 1023-1025 cm?3 s?1 (Ge) near the melting point. Arrhenius plots of the nucleation rate show that nucleation is thermally activated with an activation energy of about ΔE = 1.8 ± 0.1 eV (Ge) and ΔE = 2.47 ± 0.15 eV (Si). |
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| Keywords: | Nucleation Si Ge laser irradiation |
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