Free carrier Voigt magneto-absorption in cubic semiconductors

A compensation bridge for measuring Voigt magneto-absorption in semiconductors has been setup for X-band. Room temperature measurements for phase and amplitude, as a function of magnetic field up to 9.8 kOe, have been carried on n-type single crystals of germanium, at 9.02 GHz. Theoretical calculations have been done for the amplitude and phase measurements as a function of magnetic field taking into account lattice scattering. There is a good agreement between the experimental and the theoretical results.