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V^20+电子碰撞激发截面
引用本文:周忠源 潘守甫. V^20+电子碰撞激发截面[J]. 原子与分子物理学报, 1997, 14(2): 201-203
作者姓名:周忠源 潘守甫
作者单位:吉林大学原子与分子物理研究所
基金项目:中国原子与分子数据研究联合体资助
摘    要:采用CoulombBorn交换近似,在修改了有效核电荷的Z标度类氢模型下,计算了‘水窗’波段V20+离子精细结构能级间的电子碰撞激发截面

关 键 词:水窗  精细结构能级  截面

EXCITATION CROSS SECTIONS OF V 20
Zhou Zhongyuan Pan Shoufu Institute of Atomic and Molecular Physics,Jilin University,Changchun. EXCITATION CROSS SECTIONS OF V 20[J]. Journal of Atomic and Molecular Physics, 1997, 14(2): 201-203
Authors:Zhou Zhongyuan Pan Shoufu Institute of Atomic  Molecular Physics  Jilin University  Changchun
Affiliation:Zhou Zhongyuan Pan Shoufu Institute of Atomic and Molecular Physics,Jilin University,Changchun,130023
Abstract:Excitation cross sections between fine structure levels of V 20 in water window are calculated by using Coulomb Born exchanged approximation and Z scaled hydrogenic approximation in which the calculation method of the nuclear charges is modified.
Keywords:water window fine structure level cross sections
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