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Giant Rabi splitting in metal/semiconductor nanohybrids
Authors:Joel Bellessa  Clementine Symonds  Kevin Vynck  Luc Beaur  Arnaud Brioude  Aristide Lemaitre
Institution:1. Université Lyon 1, LPMCN, UMR CNRS 5586, 69622 Villeurbanne, France;2. Groupe d’Etude des Semiconducteurs, UMR 5650 CNRS-Université Montpellier II, CC074, France;3. LMI Université de Lyon, UMR CNRS 5615, 69622 Villeurbanne, France;4. LPN, CNRS UPR20, Route de Nozay, 91460 Marcoussis, France
Abstract:We present strong coupling regime between localized plasmon in lithographed nanoparticles and excitons in an organic semiconductor. The lithographed nanoparticles allow a very good control of the particle size and environment, thereby avoiding a large inhomogeneous broadening of the plasmonic resonances which could partially mask the plasmon/exciton hybridization. The nanoparticles diameter ranges from 100 to 200 nm. A giant Rabi splitting energy of 450 meV is obtained, and typical behaviors of mixed states, i.e. anticrossing of their energies and crossing of their linewidths, are observed. Three-dimensional finite-difference time-domain simulations and coupled oscillator calculations are used to analyze and corroborate the experimental results.
Keywords:Localized plasmon  Metallic nanoparticle  Strong coupling  Polariton  Organic semiconductor
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