Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process |
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| Authors: | P-T Hsieh Y-C Chen C-M Wang Y-Z Tsai C-C Hu |
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| Institution: | (1) Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, P.R. China;(2) Department of Electrical Engineering, Cheng Shiu University, Kaohsiung, Taiwan, P.R. China;(3) Department of Electronic Engineering, Cheng Shiu University, Kaohsiung, Taiwan, P.R. China |
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| Abstract: | ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900 °C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500 °C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500 °C and reached a maximum intensity at 900 °C. The possible mechanisms for visible-light emission are discussed. PACS 81.15.Cd; 81.40.Ef; 78.55.-m; 78.55.Et |
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