Dielectric property of CaCu3Ti4O12 thin film grown on Nb-doped SrTiO3(100) single crystal |
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Authors: | A Srivastava and C K Sarkar |
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Institution: | (1) Consiglio Nazionale delle Ricerche, Strada VIII, 5, Istituto per la Microelettronica e Microsistemi (IMM), 95121 Catania, Italy |
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Abstract: | Thin film of CaCu3Ti4O12 (CCTO) has been deposited on Nb-doped SrTiO3(100) single crystal using pulsed laser deposition. The dielectric constant and AC conductivity of CCTO film in the metal–insulator–metal
capacitor configuration over a wide temperature (80 to 500 K) and frequency (100 Hz to 1 MHz) range have been measured. The
small dielectric dispersion with frequency observed in the lower temperature region (<300 K) indicates the presence of small
defects in the deposited CCTO thin film. The frequency-dependent AC conductivity at lower temperature indicates the hopping
conduction. The dielectric dispersion data has been analyzed in the light of both conductivity relaxation and Debye type relaxation
with a distribution of relaxation times. Origin of dielectric dispersion is attributed to the distribution of barrier heights
such that some charge carriers are confined between long-range potential wells associated with defects and give rise to dipolar
polarization, while those carriers which do not encounter long-range potential well give rise to DC conductivity. |
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