Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage |
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作者姓名: | 郭扬铭 莫党 李哲怡 刘毅 何振辉 陈第虎 |
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作者单位: | StateKeyLaboratoryofOptoelectronicMaterialsandTechnologies,DepartmentofPhysics,SunYat-SenUniversity;Guangzhou510275 |
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摘 要: | Tetrahedral amorphous hydrogenated carbon (ta-C:H) films on Si(lO0) substrates were prepared by using a magnetic-field-filter plasma stream deposition system. Samples with different ratios of sp^3-bond to sp^2-bond were obtained by changing the bias voltage applied to the substrates. The ellipsometric spectra of various carbon films in the photon energy range of 1.9-5.4eV were measured. The refractive index n and the relative sp^3 C ratio of these films were obtained by simulating their ellipsometric spectra using the Forouhi-Bloomer model and by using the Bruggeman effective medium approximation, respectively. The haemocompatibility of these ta-C:H films was analysed by observation of platelet adhesion and measurement of kinetic clotting time. The results show that the sp^3 C fraction is dependent on the substrate bias voltage, and the haemocompatibility is dependent on the ratio of sp^3-bond to sp^2-bond. A good haemocompatibility material of ta-C:H films with a suitable sp^3 C fraction can be prepared by changing the substrate bias voltage.
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关 键 词: | 逼近性 碳膜 中子衍射 磁场 SEM |
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