Pulse and frequency response of a p-i-n photodiode with absorption layer fabricated in two-valley semiconductor

Starting from the transport equations of the phenomenological model for a two-valley semiconductor, we obtained the pulse response of a p-i-n photodiode with the absorption layer fabricated in a two-valley semiconductor (GaAs, InGaAs...). The pulse response was determined for the case when it was possible to linearize the transport equations. It was shown that the nonstationary effects influence significantly the intensity and speed of the response. The frequency response was obtained by applying the fast Fourier transform (FFT) to the pulse response.