Silicon nano-wires fabricated by a novel thermal evaporation of zinc sulfide |
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Authors: | Junjie Niu Jian Sha Deren Yang |
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Institution: | a State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China;b Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China |
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Abstract: | Silicon nano-wires (SiNWs) with diameter of 30 nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080°C for 1 h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfide-assisted growth model of SiNWs was suggested. |
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Keywords: | Nano-wires Silicon Sulfide-assisted |
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