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Surface structure of In/Si(1 1 1) studied by reflection high-energy positron diffraction |
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| Authors: | M. Hashimoto Y. Fukaya A. Ichimiya |
| Affiliation: | a Advanced Science Research Center, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan b Faculty of Science, Japan Women’s University, 2-8-1 Mejirodai, Bunkyo-ku, Tokyo 112-8681, Japan |
| Abstract: | We have investigated a quasi-one-dimensional structure of In/Si(1 1 1) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 Å and 0.55 Å from the Si zigzag chain in both 4 × 1 (210 K) and 8 × 2 (60 K) phases. |
| Keywords: | Surface structure Reflection high-energy positron diffraction Total reflection Silicon Indium |
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