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Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode |
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| Authors: | J Maul J Lin A Oelsner D Valdaitsev N Weber M Merkel U Heinzmann G Schönhense |
| Institution: | a Institut für Physik, Johannes Gutenberg-Universität Mainz, Staudingerweg 7, 55128 Mainz, Germany b Fakultät für Physik, Universität Bielefeld, Postfach 100131, 33501 Bielefeld, Germany c Focus GmbH, Neukirchner Str. 2, 65510 Hünstetten-Kesselbach, Germany d Schott-Lithotec AG, Otto Schott-Str. 13, 07745 Jena, Germany e Ludwig Maximilian-Universität, Am Coulombwall 1, 85748 Garching, Germany |
| Abstract: | We report on recent developments of an “at wavelength” full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5 nm wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50 nm and report on first results obtained from a six inches mask blank prototype as prerequisite for industrial usage. |
| Keywords: | Extreme ultraviolet lithography (EUVL) Photoemission electron microscopy (PEEM) EUV-PEEM Defect analysis Multilayer mask blanks |
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