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Ferromagnetism of Mn-implanted silicon: Magnetization and magnetooptic faraday effect |
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| Authors: | A B Granovskiĭ Yu P Sukhorukov A F Orlov N S Perov A V Korolev E A Gan’shina V I Zinenko Yu A Agafonov V V Saraĭkin A V Telegin D G Yarkin |
| Institution: | (1) Moscow State University, Moscow, 119992, Russia;(2) Institute of Metal Physics, Ural Division, Russian Academy of Sciences, Yekaterinburg, 620212, Russia;(3) Giredmet State Research Institute for the Rare-Metals Industry, Moscow, 119017, Russia;(4) Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia;(5) Lukin State Research Institute of Physical Problems, Zelenograd, Moscow, 103460, Russia |
| Abstract: | Manganese-implanted silicon plates of both n and p types have been obtained by implanting 195-keV manganese ions with doses from 1 × 1015 to 2 × 1016 cm?2. According to magnetic measurements by a vibrating sample magnetometer and a SQUID magnetometer, all of the samples exhibit a ferromagnetic ordering at room temperature. The magnetooptic Faraday effect is manifested in the spectral region 1–6 μm in the temperature interval 80–305 K. The characteristic features of the field and temperature dependences of magnetization and the spectrum of the Faraday effect indicate a percolation type of magnetic ordering at low temperatures and a crucial role of the exchange between delocalized p-type carriers and Mn ions at temperatures above 100 K. |
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