| 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响 |
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| 引用本文： | 王韬,张希清.非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响[J].发光学报,2017,38(11). |
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| 作者姓名： | 王韬 张希清 |
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| 作者单位： | 北京交通大学 光电子技术研究所,北京,100044 |
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| 基金项目： | 国家自然科学基金(51372016;61275022)资助项目 Supported by National Natural Science Foundation of China |
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| 摘 要： | 为了优化镁铟锡氧薄膜晶体管(MITO-TFT)的性能,采用磁控溅射法制备MITO-TFT并分别研究了退火温度和退火气氛(O_2流量)对器件性能的影响。实验结果表明,O_2流量为400 cm~3/min、退火温度为750℃的MITO薄膜为非晶态,且其对应薄膜晶体管有最佳性能,其饱和迁移率为12.66 cm~2/(V·s),阈值电压为0.8 V,开关比达到10~7。适当的退火处理可以有效减少缺陷与界面态密度,并提高器件性能。
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| 关 键 词： | MITO-TFT 氧化物半导体 迁移率 退火温度 退火氧气流量 |
Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor |
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| WANG Tao,ZHANG Xi-qing.Fabrication and Effect of Annealing Treatment on Performance of Amorphous Mg-In-Sn-O Thin Film Transistor[J].Chinese Journal of Luminescence,2017,38(11). |
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| Authors: | WANG Tao ZHANG Xi-qing |
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| Abstract: | In order to optimize the performance of Mg-In-Sn-O thin film transistors ( MITO-TFTs) , MITO-TFTs were fabricated by radio frequency magnetron sputtering. The electrical properties on the effect of the annealing temperature and annealing ambient ( O2 flow rate) were investigated. The 750℃ annealed MITO thin film with 400 cm3/min O2 flow is amorphous and the corresponding TFT shows best performance with saturation field effect mobility of 12. 66 cm2/(V·s), threshold voltage of 0. 8 V and on/off ratio reaches 107 . Proper annealing will reduce defect and interface states den-sity, improve the device performance effectively. |
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| Keywords: | MITO-TFT oxide semiconductor filed effect mobility annealing temperature annealing O2 flow rate |
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